Third-generation semiconductor materials (2000): silicon carbide (SiC), gallium nitride (GaN), zinc oxide (ZnO), diamond, aluminum nitride (AlN), etc.
Since the beginning of the 21st century, emerging electronic technologies such as smartphones, new energy vehicles, and robots have been developed rapidly. At the same time, global energy and environmental crises have become prominent, and energy utilization has tended to reduce power consumption and fine management. The first and second generation semiconductor materials can no longer meet the needs of science and technology due to their own performance limitations. The third-generation semiconductor materials represented by silicon carbide (SiC) and gallium nitride (GaN) can overcome the inherent deficiencies of silicon (Si) and become able to meet the needs of a wider range of industries, especially the high-performance sensor industry, automotive electronics , IT high-speed communications, medical, aerospace, etc.