ABOUT CHE.GIE

Profile of CHN.GIE

CHN.GIE is an international intelligent equipment manufacturing company. The core research team is formed by a management team of senior technical experts in the industry. It has a full lineup of R&D, design, manufacturing, and operation management. The company is committed to the R&D and manufacturing of high-end equipment and materials for semiconductor industries.  

Since 2007, CHN.GIE has carried out research on laser processing technologies and semiconductor material characteristics with the benefits of multiple laboratories. Its engineering team has accumulated rich experience of automation equipment R&D and manufacturing in providing foundry services for world-class brands.

We not only manufacture the international leading semiconductor wafer Dicing equipment, but also provide total Dicing process solutions and Technical personnel training services.

Development History of Semiconductor Materials

Since the 1950s, the semiconductor industry has gone through more than 70 years of development. Semiconductor materials have undergone continuous iterations of the first and second generation of application technologies, and have gradually reached performance limits in certain areas. The third-generation semiconductor materials with wide band performance are rapidly expanding their application range.

After long-term application technology development, silicon semiconductor material manufacturing technology and microcircuit processing technology have reached close to the optimal level, especially in the fields of electronic computer logic processing chips, low-power control chips and other fields. The manufacturing technology of silicon semiconductor products is mature and still have cost advantages for a long time.

The dominance of silicon semiconductor materials in the human industrial society remains unshakable.

The first generation of semiconductor materials (1950th): silicon (Si), germanium (Ge)

Second generation semiconductor materials (1990th): Gallium arsenide (GaAs), Indium antimonide（InSb）; GaAsAl, GaAsP; Ge-Si, GaAs-GaP; amorphous semiconductors: amorphous silicon, glass oxide semiconductors, organic semiconductors

Since the 1990s, with the rapid development of mobile communications, the rise of information highways based on optical fiber communications and the Internet, the physical properties of silicon materials have limited its applications in optoelectronics and high-frequency power devices, such as its indirect band gap determines that it cannot obtain high electro-optical conversion efficiency.

The second-generation compound semiconductor materials represented by gallium arsenide and indium phosphide have begun to be used, mainly for the production of high-speed, high-frequency, high-power and light-emitting electronic devices. It is an excellent material for making high-performance microwave, millimeter wave devices and light-emitting devices.

It is also widely used in satellite communications, mobile communications, optical communications and GPS navigation. For example, compared to the first generation of semiconductors, gallium arsenide (GaAs) can be used in the field of optoelectronics, especially in infrared lasers and high-brightness red light diodes

Third-generation semiconductor materials (2000): silicon carbide (SiC), gallium nitride (GaN), zinc oxide (ZnO), diamond, aluminum nitride (AlN), etc.

Since the beginning of the 21st century, emerging electronic technologies such as smartphones, new energy vehicles, and robots have been developed rapidly. At the same time, global energy and environmental crises have become prominent, and energy utilization has tended to reduce power consumption and fine management. The first and second generation semiconductor materials can no longer meet the needs of science and technology due to their own performance limitations. The third-generation semiconductor materials represented by silicon carbide (SiC) and gallium nitride (GaN) can overcome the inherent deficiencies of silicon (Si) and become able to meet the needs of a wider range of industries, especially the high-performance sensor industry, automotive electronics , IT high-speed communications, medical, aerospace, etc.

The History of CHN.GIE

The R&D team was established. The laser welding R&D laboratory was set up to get involved in the consumer electronics and semiconductor industries

The Stealth-Laser cutting technology was successfully used for glass cutting. The company achieved ISO9000 qualification.

Successfully produced Stealth-laser dicing equipment for wafers with Independent intellectual property rights. Applied and filed multiple invention patents.

Passed the multi evaluation tests with potential clients. Kept continuously improving and optimizing the process through thousands of dicing process testing with giant semiconductor makers.

CHN.GIE’s Stealth-Laser Wafer Dicing Equipment debuted and filled the gaps in the stealth- laser dicing process technologies of China successfully.

Inspire the future and keep pioneering

2020

2019

2018

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2013

2007

Philosophy of CHN.GIE

Steady operation, Pioneering and innovative, Faithful and Honest, Socially Responsible

Service Principles

Clients are most respectable. Client’s words are most valuable.               

Business Philosophy

The world's leading high-end equipment manufacturer for semiconductor.

Corporate Vision